Method of inspecting surface and method of manufacturing semiconductor device

ABSTRACT

Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority under 35 U.S.C. §119 to Korean PatentApplication No. 10-2016-0109331, filed on Aug. 26, 2016, in the KoreanIntellectual Property Office, the disclosure of which is incorporatedherein in its entirety by reference.

BACKGROUND 1. Field

Inventive concepts relate to a method of inspecting a surface and/or amethod of manufacturing a semiconductor device, and more particularly,to a method of inspecting a surface including an operation of inspectinga surface of a micro-area and/or a method of manufacturing asemiconductor device.

2. Description of Related Art

Semiconductor devices may be manufactured by performing numerous (e.g.,several hundred) manufacturing processes on a wafer. In this case, atechnique in which results of manufacturing processes are rapidlyinspected or measured after performing each of the manufacturingprocesses is used in order to improve a yield and quality of a wafer. Inaddition, a technique in which a fine pattern or a complex structure isinspected at a high speed is used in accordance with the highintegration of recent semiconductor devices.

SUMMARY

Inventive concepts relate to a method of inspecting a surface includingan operation of inspecting a micro-area and/or a method of manufacturinga semiconductor device.

According to some example embodiments of inventive concepts, a method ofinspecting a surface includes preparing a substrate which is aninspection target, selecting a spatial resolution of a first opticaldevice, emitting multi-wavelength light toward a first measurement areaof the substrate, obtaining first wavelength-specific images, generatingfirst spectrum data based on the first wavelength-specific images,extracting a spectrum of at least one first inspection area having arange of the first measurement area or less from the first spectrumdata, and analyzing the spectrum. The first optical device includes alight source configured to emit light, an objective lens configured totransmit light received from the light source, a detector, and animaging optical system configured to image light detected by thedetector. The selecting the spatial resolution of the first opticaldevice includes setting a magnification of the imaging optical system.The emitting multi-wavelength light toward the first measurement area ofthe substrate includes using the light source to emit themulti-wavelength light and the objective lens to transmit themulti-wavelength light received from the light source towards the firstmeasurement area. The obtaining first wavelength-specific imagesincludes the imaging optical system and the detector.

According to some example embodiments of inventive concepts, a method ofmanufacturing a semiconductor device includes performing a priormanufacturing process on a substrate, and primarily inspecting thesubstrate using an optical device. The optical device includes a lightsource configured to emit light, an objective lens configured totransmit light received from the light source, a detector, and animaging optical system configured to image light detected by thedetector. The primarily inspecting of the substrate includes selecting aspatial resolution of the optical device by changing a magnification ofthe imaging optical system, emitting multi-wavelength light toward ameasurement area of the substrate using the light source and theobjective lens, and obtaining wavelength-specific images, generatingspectrum data of respective pixels based on the wavelength-specificimages, extracting a spectrum of at least one inspection area having arange of the measurement area or less from the spectrum data, andanalyzing the spectrum of the at least one inspection area.

According to some example embodiments of inventive concepts, a method ofmanufacturing a semiconductor device includes preparing a substrateincluding an alignment mark, selecting a spatial resolution of anoptical device, emitting light toward an area in which the alignmentmark is formed using a light source configured to emit light and anobjective lens configured to transmit light received from the lightsource, obtaining images using the optical device, and aligning thesubstrate based on the images. The optical device includes the lightsource, the objective lens, a detector, and an imaging optical systemconfigured to image light detected by the detector. The selecting thespatial resolution of the optical device includes selecting the spatialresolution of the optical device by changing a magnification of theimaging optical system, and the emitting light toward the area in whichthe alignment mark is formed using the light source and the objectivelens. The aligning the substrate includes checking a position of thealignment mark of the substrate based on the images, and moving thesubstrate so that the alignment mark is aligned with preset coordinates.

According to some example embodiments of inventive concepts, a method ofinspecting a surface includes selecting a spatial resolution of a firstoptical device. The first optical device includes a light sourceconfigured to emit light, an objective lens configured to transmit lightreceived from the light source, a detector, and an imaging opticalsystem configured to image light detected by the detector. The selectingthe spatial resolution of the first optical device includes setting amagnification of the imaging optical system. The method further includesemitting multi-wavelength light toward a first measurement area of asubstrate using the light source to emit the multi-wavelength light andthe objective lens to transmit the multi-wavelength light received fromthe light source towards the first measurement area, obtaining firstwavelength-specific images using the imaging optical system and thedetector, generating first spectrum data of respective pixels based onthe first wavelength-specific images, extracting a spectrum of at leastone first inspection area having a range of the first measurement areaor less from the first spectrum data, and analyzing the spectrum. Theanalyzing the spectrum includes one of (i) predicting a 3D structure ofthe first inspection area based on matching the spectrum of the firstinspection area to a spectrum of a reference map, the reference mapbeing generated based on obtaining spectra corresponding to differentthree dimensional (3D) structures on a test substrate, and (ii)extracting a spectrum of a reference area and a spectrum of the firstinspection area from the first spectrum data, and determining if thespectrum of the first inspection area matches the spectrum of thereference area using a spectrum recognition algorithm.

BRIEF DESCRIPTION OF THE DRAWINGS

Some example embodiments of inventive concepts will be more clearlyunderstood from the following detailed description taken in conjunctionwith the accompanying drawings in which:

FIG. 1 is a flowchart illustrating a method of manufacturing asemiconductor device according to some example embodiments of inventiveconcepts;

FIG. 2 is a diagram illustrating a schematic configuration of an opticaldevice used in the method of manufacturing the semiconductor device ofFIG. 1;

FIG. 3 is a view illustrating a measurement area on a substrate, whichis measured by the optical device of FIG. 2;

FIG. 4 is a conceptual diagram illustrating wavelength-specific imagesof the measurement area of FIG. 3 and spectrum data of respectivepixels;

FIG. 5 is a flowchart illustrating an analyzing operation of FIG. 1 indetail;

FIGS. 6A and 6B illustrate three-dimensional (3D) structures fordescribing a principle for generating a reference map of FIG. 5, andspectra corresponding to the 3D structures;

FIG. 7 is a view illustrating arbitrary inspection areas extracted fromthe measurement area of FIG. 3;

FIG. 8 is a flowchart illustrating a correction operation of a lightintensity distribution due to various angle distributions of lightaccording to some example embodiments of inventive concepts;

FIGS. 9A and 9B are views illustrating a light intensity differencegenerated between two points of a uniform substrate due to various angledistributions of light as an object to be addressed by the correctionoperation of FIG. 8:

FIGS. 10A and 10B are views illustrating light intensity distributionsgenerated between a plurality of points of a uniform substrate due tovarious angle distributions of light as a process of generating acorrection table of FIG. 8;

FIG. 11 is a view illustrating the correction table of FIG. 8, whereinthe correction table represents a light intensity distributioncompensation ratio at each of the plurality of points so that the lightintensity distributions at the plurality of points of FIGS. 10A and 10Bhave a constant light intensity;

FIG. 12 is a graph illustrating a result of correcting the lightintensity distributions at a plurality of points using the correctiontable of FIG. 11;

FIG. 13 is a flowchart illustrating a correction operation of a positionmisalignment and size difference between wavelength-specific imagesincluded in an obtaining operation of wavelength-specific images of FIG.1 according to some example embodiments of inventive concepts;

FIGS. 14A to 14D are views illustrating a problem of a positionmisalignment and/or size difference between wavelength-specific imagescaused by different wavelengths as an object to be addressed by thecorrection operation of FIG. 13;

FIG. 15 is a flowchart illustrating a method of manufacturing asemiconductor device according to some example embodiments of inventiveconcepts;

FIG. 16 is a diagram illustrating a schematic configuration of opticaldevices used in the method of manufacturing the semiconductor device ofFIG. 15;

FIG. 17 is a view illustrating a measurement area and an inspection areaon a substrate, which is measured by the optical devices of FIG. 16;

FIG. 18 is a view illustrating an example of an operation in whichspecific areas of different semiconductor chips on a substrate areinspected using the method of manufacturing the semiconductor device ofFIG. 15;

FIG. 19 is a flowchart illustrating a method of manufacturing asemiconductor device according to some example embodiments of inventiveconcepts;

FIG. 20 is a view illustrating an example of an operation in which asubstrate is aligned using the method of manufacturing the semiconductordevice of FIG. 19; and

FIGS. 21A and 21B are views illustrating results of inspecting thicknessuniformity at a plurality of cell block points of a semiconductor deviceusing the method of manufacturing the semiconductor device according tothe some example embodiments of inventive concepts.

DETAILED DESCRIPTION

As used herein, the term “and/or” includes any and all combinations ofone or more of the associated listed items. Expressions such as “atleast one of,” when preceding a list of elements, modify the entire listof elements and do not modify the individual elements of the list.

Hereinafter, some example embodiments of inventive concepts will bedescribed in detail with reference to the accompanying drawings.

FIG. 1 is a flowchart illustrating a semiconductor device manufacturingmethod M100 according to some example embodiments of inventive concepts.FIG. 2 is a diagram illustrating a schematic configuration of an opticaldevice 100 used in the semiconductor device manufacturing method M100 ofFIG. 1. FIG. 3 is a view illustrating a measurement area FOV on asubstrate 111, which is measured by the optical device 100 of FIG. 2.FIG. 4 is a conceptual diagram illustrating wavelength-specific imagesof the measurement area of FIG. 3 and spectrum data of respective pixelsbased on the wavelength-specific images. The substrate 111 may include asemiconductor wafer.

Referring to FIGS. 1 and 2, a structural change of the substrate 111 (orstructural changes of the substrate) may be inspected each time amanufacturing process is completed. Specifically, after a priormanufacturing process is performed on the substrate 111 (S101),inspection may be performed on a surface of the substrate 111 on whichthe prior manufacturing process has been performed. Chip areas may beformed on the substrate 111 on which the prior manufacturing process hasbeen performed, but inventive concepts are not thereto. The priormanufacturing process may be any process used for manufacturing asemiconductor device, such as a deposition process, a pattern formingprocess, an etching process, and a cleaning process.

Before performing the inspection, a spatial resolution may be selectedby changing (or setting) a magnification of an imaging optical system109 of the optical device 100 (S102).

The optical device 100 may include a light source 101, a monochrometer102, an incident optical system 103, an incident polarizer 104, a beamsplitter 105, an aperture 106, an objective lens 107, an outputpolarizer 108, the imaging optical system 109, a detector 110, a stage112, a signal processor 113, and a signal analyzer 114.

The imaging optical system 109 may be a component for imaging an imageof the substrate 111. The imaging optical system 109 may determine aspatial resolution that may be measured based on the magnificationthereof. That is, a desired and/or minimum measurable area may beselected by the imaging optical system 109. In this case, themagnification of the imaging optical system 109 may be adjusted toselect a desired and/or minimum pixel area of the detector 110 as thedesired and/or minimum measurable area. In other example embodiments,the magnification of the imaging optical system 109 may be adjusted toselect an area having a light spot size or less as the desired and/orminimum measurable area. The imaging optical system 109 may include atleast one lens for adjusting a magnification of light reflected by thesubstrate 111.

The light source 101 may generate multi-wavelength light having a widewavelength band, for example, light having a wavelength band of visiblelight. In this case, a wavelength of visible light may range from 400 nmto 800 nm. The monochrometer 102 may alter multi-wavelength lightreceived from the light source 101 to be light having a narrowwavelength band. Specifically, the monochrometer 102 may be used toselect only a specific wavelength band of multi-wavelength light. Theincident optical system 103 may make parallel light by concentratingreceived light. The incident polarizer 104 may adjust a polarizationstate of light incident on the substrate 111. The beam splitter 105 maychange a direction of light received from the incident polarizer 104 ormay pass light reflected by the substrate 111. The aperture 106 mayreceive light from the beam splitter 105 to control a range of anincidence angle of the light.

The objective lens 107, which is a component which transmits lighttoward the substrate 111, may change a magnification of an image, whichis measured through position adjustment. Meanwhile, when a numericalaperture (NA) of the objective lens 107 is large, a resolution of lightmay be increased. Conversely, when the NA of the objective lens 107 issmall, the resolution may be reduced.

In some example embodiments, after the selecting of the spatialresolution by changing the magnification of the imaging optical system109 (S102), the method may further include selecting a measurement modeby changing the objective lens 107. Specifically, the selection of themeasurement mode may be selecting any one of a first measurement modehaving a first NA and a second measurement mode having a second NAsmaller than the first NA. The optical device 100 may be driven in thefirst measurement mode to have a relatively higher resolution than inthe second measurement mode. Also referring to FIG. 2, the selection ofany one of the first and second measurement modes may be performed in aprocess of changing the objective lens 107 or changing a shape of theaperture 106.

The measurement mode may be selected from the substrate 111 on the basisof a type of a parameter to be inspected. The parameter may be at leastone of uniformity of a film, a thickness of a structure, a width of astructure, an etched depth, a critical dimension, a shape, and aphysical property of a film.

In some example embodiments, when the parameter is uniformity of a film,a thickness of a single structure, a width of a single structure, anetched depth of a single hole, a critical dimension of a singlestructure, or a shape of a single structure, the first measurement modemay be selected. A three-dimensional (3D) structure of a singlestructure and the like may be accurately imaged in the first measurementmode. In other example embodiments, when the parameter is an arrangementof a plurality of structures, the second measurement mode may beselected. The second measurement mode may have a resolution slightlysmaller than that of the first measurement mode, and may address aproblem in which images of the plurality of structures are overlapped.

The output polarizer 108 may adjust a polarization state of lightreflected by the substrate 111. The incident polarizer 104 and theoutput polarizer 108 may be selected to respectively have an incidentpolarization angle and an output polarization angle so as to sensitivelyreact to a target to be detected.

The detector 110 may detect an image because light is imaged by theimaging optical system 109. The stage 112 may support the substrate 111and may be moved in an X direction, a Y direction, and a Z direction.The signal processor 113 may obtain a signal from the detector 110, andthe signal analyzer 114 may receive the signal from the signal processor113 to analyze the signal. The signal processor 113 may include acentral processing unit (CPU), controller, ASIC or other suitablehardware processor and memory.

After the selecting of the spatial resolution (S102),wavelength-specific images IMG1, IMG2, IMG3, IMG4, and IMG5 may beobtained by emitting (and/or directing) multi-wavelength light L towarda first measurement area FOV of the substrate 111 on which the priormanufacturing process has been performed (S103). Specifically, themulti-wavelength light L emitted (and/or directed) toward the substrate111 may be reflected by the first measurement area FOV, may pass throughthe imaging optical system 109, and may be incident on the detector 110,and the first measurement area FOV may be shown as thewavelength-specific images IMG1, IMG2, IMG3, IMG4, and IMG5.

In some example embodiments, before the obtaining of thewavelength-specific images IMG1, IMG2, IMG3, IMG4, and IMG5 of thesubstrate 111 on which the prior manufacturing process has beenperformed, wavelength-specific base images of the substrate 111 beforethe prior manufacturing process is performed may be obtained. Next, thewavelength-specific base images may be removed from thewavelength-specific images of the substrate 111 on which the priormanufacturing process has been performed. Accordingly, in the obtainingof the wavelength-specific images of the substrate 111 on which theprior manufacturing process has been performed, an optical interferenceeffect caused by light reflected by structures included in the substrate111 may be reduced and/or minimized.

The multi-wavelength light L emitted (and/or directed) toward thesubstrate 111 may be used to represent the structures of the substrate111 as a high-resolution image by the objective lens 107 having a highNA.

The first measurement area FOV may be a single chip area or a pluralityof chip areas according to a range in which the multi-wavelength light Lis emitted (and/or directed). The wavelength-specific images IMG1, IMG2,IMG3, IMG4, and IMG5 of the first measurement area FOV may be made withat least one pixel PIXEL. Although not illustrated, in some embodiments,the first measurement area FOV may be an area corresponding to a desiredand/or minimum amount of pixels PIXELs of the detector 110. In thiscase, in the selecting of the spatial resolution (S102), the opticaldevice 100 may be selected so as to have a high spatial resolution byincreasing the magnification of the imaging optical system 109.

After the obtaining of the wavelength-specific images IMG1, IMG2, IMG3,IMG4, and IMG5 (S103), spectrum data SPD of respective pixels PIXELs maybe generated based on the wavelength-specific images IMG1, IMG2, IMG3,IMG4, and IMG5 (S105). The spectrum data SPD may be image data obtainedby the detector 110. The spectrum data SPD may be obtained through apixel re-sampling process of a spatial area and a spectrum area. Thespectrum data SPD may be configured as a plurality of thewavelength-specific images IMG1, IMG2, IMG3, IMG4, and IMG5 according tospatial coordinates, that is, a space X and a space Y, and a wavelengthλ as illustrated in FIG. 4. Only five wavelength-specific images IMG1,IMG2, IMG3, IMG4, and IMG5 are illustrated in FIG. 4, but inventiveconcepts are not thereto.

After the generating of the spectrum data SPD (S105), a spectrum of atleast one inspection area having a range of the first measurement areaFOV or less may be extracted from the spectrum data SPD to be analyzed(S107). As described above, the spectrum data SPD of the firstmeasurement area FOV may be made with at least one pixel PIXEL.Therefore, a plurality of inspection areas may be areas corresponding topixels PIXELs. The plurality of inspection areas may be areascorresponding to two or more pixels PIXELs which are spaced apart fromeach other.

Spectra relatively corresponding to the plurality of inspection areas,which are extracted from the spectrum data SPD, represent information onstates of surfaces of the plurality of inspection areas, and the statesof the surfaces of the plurality of inspection areas may be predicted byanalyzing the spectra.

Also referring to FIG. 7, first and second spectra IR1 and IR2 of firstand second inspection areas of an image IMG corresponding to ameasurement area may be extracted. In this case, the first and secondspectra IR1 and IR2 may be displayed on the image IMG with only awavelength having a maximum light intensity of each of the spectra.Therefore, a state of a surface of each inspection area may be easilychecked.

The first and second inspection areas may be areas corresponding to thepixels PIXELs. The first and second inspection areas may be areascorresponding to two pixels PIXELs which are spaced apart from eachother.

Then, a subsequent manufacturing process may be performed on thesubstrate 111 on which the prior manufacturing process has beenperformed (S109). The subsequent manufacturing process may be anyprocess used for manufacturing a semiconductor device, such as adeposition process, a pattern forming process, an etching process, and acleaning process.

Then, it may be determined whether it is necessary to perform inspectionon the surface of the substrate on which the subsequent manufacturingprocess has been performed (S111). When it is determined that it isnecessary to perform inspection on the surface of the substrate, theinspection may be performed on the surface of the substrate 111 byperforming the obtaining of the wavelength-specific images (S103), thegeneration of the spectrum data of respective pixels (S105), and theextraction and analysis of the spectrum of the inspection area (S107) asdescribed above. In this case, a measurement area of the substrate 111on which the subsequent manufacturing process has been performed may bethe same as the measurement area of the substrate 111 on which the priormanufacturing process has been performed. Accordingly, a structuralchange of the measurement area may be monitored in the subsequentmanufacturing process.

In this way, according to inventive concepts, whether an error ispresent in the processes may be immediately determined since asemiconductor manufacturing process and a real-time inspection processare performed in real-time, and optimal process conditions during thesemiconductor manufacturing process may be derived since an error isappropriately fed back to a manufacturing process facility.

The method of inspecting the surface of the substrate 111 is describedas an example of the semiconductor device manufacturing method M100 inFIGS. 1 to 4, but inventive concepts are not thereto. The method ofinspecting the surface of the substrate 111 may be used for inspecting asurface of an inspection target rather than that of a semiconductordevice.

FIG. 5 is a flowchart illustrating the analyzing operation (S107) ofFIG. 1 in detail. FIGS. 6A and 6B illustrate 3D structures fordescribing a principle for generating a reference map of FIG. 5 andspectra corresponding to the 3D structures. FIG. 7 is a viewillustrating spectra of arbitrary inspection areas extracted from themeasurement area of FIG. 3.

Referring to FIG. 5, the analyzing operation (S107) of FIG. 1 mayinclude generating a reference map (S107-1) and predicting a 3Dstructure of an inspection area (S107-2).

Also referring to FIGS. 6A and 6B, a reference map may be generated byobtaining spectra SS1 and SS2 respectively corresponding to different 3Dstructures S1 and S2 formed on a test substrate. For example, a firststructure S1 may have a first width W1 and a first height H1, and inthis case, a first spectrum SS1 may be obtained by emitting (and/ordirecting) light toward the first structure S1. In the first spectrumSS1, a light intensity of a first wavelength band λ1 may be largest.Further, a second structure S2 different from the first structure S1 mayhave a second width W2 and a second height H2, and in this case, asecond spectrum SS2 different from the first spectrum SS1 may beobtained by emitting (and/or directing) light toward the secondstructure S2. In the second spectrum SS2, a light intensity of a secondwavelength band X2 different from the first wavelength band X1 may belargest. That is, a 3D structure of the inspection area may be predictedfrom aspects of the spectra.

FIGS. 6A and 6B are intended to illustrate the reference map, and thereference map is not limited to only the above-described spectra of thestructures. The reference map may include spectra of various 3Dstructures and physical properties.

Also referring to FIG. 7, spectra of a plurality of inspection areas ofthe first measurement area FOV may be extracted from the spectrum dataSPD of FIG. 4, and a 3D structure may be predicted by matching theextracted spectra to the spectra of the reference map. For example, whena spectrum IR1 of a first inspection area matches the first spectrum SS1of FIG. 6A, it may be predicted that the first inspection area has asurface which is formed to correspond to the first structure S1. In thesame manner, when a spectrum IR2 of a second inspection area matches thesecond spectrum SS2 of FIG. 6B, it may be predicted that the secondinspection area has a surface which is formed to correspond to thesecond structure S2.

The matching of the spectra of the first and second inspection areas tothe spectra of the reference map may be performed by an optical criticaldimension (OCD) instrument including a spectrum recognition algorithm.The OCD instrument may be included in the signal analyzer 114 of FIG. 2,and may be equipment for extracting a 3D structure from spectrum data. Arigorous coupled-wave analysis (RCWA) algorithm may be used as thespectrum recognition algorithm of the OCD instrument. The RCWA algorithmmay be useful in describing diffraction and reflection of anelectromagnetic wave from a surface having a lattice structure.Therefore, the spectra of the inspection areas extracted from thespectrum data stored in the signal analyzer 114 may be used forpredicting a 3D structure by performing matching of the spectra usingthe OCD instrument. The signal analyzer 114 may include a centralprocessing unit (CPU), controller, ASIC or other suitable hardwareprocessor and memory for storing instructions, such that when signalanalyzer 114 executes the instructions in the memory, the signalanalyzer 114 is configured to analyze spectra using the spectrumrecognition algorithm (e.g., RCWA) and OCD instrument.

In this way, according to inventive concepts, a plurality of inspectionareas may be analyzed by rapidly extracting the plurality of inspectionareas from the spectrum data SPD while securing the spectrum data SPD ofa relatively wide measurement area FOV by adjusting a position of theobjective lens 107. In this case, since a desired and/or minimummeasurable area is reduced to a micro-area corresponding to a pixel ofthe detector 110 by changing the magnification of the imaging opticalsystem 109, a plurality of micro inspection areas may be rapidlyextracted and analyzed. Further, the objective lens 107, which is a highmagnification objective lens, may analyze a 3D structure at a highresolution.

Meanwhile, also referring to FIG. 2, multi-wavelength light Ltransmitted from the objective lens 107 toward the measurement area FOVof the substrate 111 may include various angle distributions. In thiscase, all of the plurality of inspection areas in the measurement areaFOV are commonly imaged by the light L, but wavelength-specific lightintensity distributions may vary according to a position of aninspection area due to the various angle distributions in the light L.Specifically, referring to FIGS. 9A and 9B, when light having variousangle distributions is emitted (and/or directed) to a measurement areaof a uniform test substrate 121 without a structural and physicaldifference according to a position thereof, two inspection areas Pa andPb of the uniform test substrate 121 may have wavelength-specific lightintensity differences ΔI between spectra Spa and SPb due to the variousangle distributions of the light.

Accordingly, the obtaining of the wavelength-specific images (S103) mayrequire correcting a light intensity distribution which is representedin the plurality of inspection areas in the measurement area FOV due tothe various angle distributions of the light. The correcting of thelight intensity distribution will be described below with reference toFIGS. 8 to 12.

FIG. 8 is a flowchart illustrating a correction operation of a lightintensity distribution due to various angle distributions of light as anoperation included in the obtaining of the wavelength-specific images(S103) of FIG. 1 according to some example embodiments of inventiveconcepts. FIGS. 9A and 9B are views illustrating an object to beaddressed by the correction operation of FIG. 8 described above.

Referring to FIG. 8, the correction of the light intensity distributiondue to the various angle distributions of the light may include emitting(and/or directing) light including various angle distributions toward auniform test substrate and generating a correction table based on alight intensity distribution of light reflected by the uniform testsubstrate (S103-1), emitting (and/or directing) light including variousangle distributions toward a measurement area and obtaining apreliminary image of the measurement area (S103-2), and correcting thepreliminary image using the correction table and obtaining a correctedimage (S103-3).

The generating of the correction table (S103-1) will be described belowwith reference to FIGS. 10A to 12.

FIGS. 10A and 10B are views illustrating a light intensity distributiongenerated between a plurality of points of a uniform substrate due tovarious angle distributions of light as a process of generating thecorrection table of FIG. 8. FIG. 11 is a view illustrating thecorrection table of FIG. 8, wherein the correction table represents alight intensity distribution compensation ratio at each of the pluralityof points so that light intensity distributions at the plurality ofpoints of FIGS. 10A and 10B have a constant light intensity. FIG. 12 isa graph illustrating results of correcting the light intensitydistributions at the plurality of points using the correction table ofFIG. 11.

Referring to FIGS. 10A and 10B, light, which is set to a mode to be usedin the obtaining of the wavelength-specific images (S103), may beemitted (and/or directed) toward a measurement area of a uniform testsubstrate without a structural and physical difference according to aposition thereof, and a wavelength-specific image IMGex of themeasurement area may be obtained. In this case, the light may includevarious angle distributions.

Then, spectrum data of respective pixels corresponding to themeasurement area may be generated based on the wavelength-specific imageIMGex. Next, spectra SP₁ to SP_(N) of a plurality of areas P₁ to P_(N)of the spectrum data may be extracted. Referring to the spectra SP₁ toSP_(N) of the plurality of areas P₁ to P_(N), although the plurality ofareas P₁ to P_(N) form uniform surfaces, a difference betweenwavelength-specific light intensity distributions is generated due tovarious angle distributions of light.

The plurality of areas P₁ to P_(N) may be unit areas for correcting anintensity of light. Therefore, as distances ISs between the plurality ofareas P₁ to P_(N) are reduced, the light intensity may be more preciselycorrected. For example, the plurality of areas P₁ to P_(N) may be areascorresponding to pixels of the spectrum data.

Referring to FIG. 11, light intensity distribution compensation ratiosΔI₁ to ΔI_(N) may be obtained from the spectra SP₁ to SP_(N) of theplurality of areas P₁ to P_(N), respectively. The light intensitydistribution compensation ratios ΔI₁ to ΔI_(N) may bewavelength-specific compensation ratios.

Referring to FIG. 12, when the correction table of FIG. 11 is applied tothe wavelength-specific spectra SP₁ to SP_(N) of the plurality of areasP₁ to P_(N) of FIG. 10B, since wavelength-specific corrected spectraSP₁′ to SP_(N)′ having the same light intensity in the respectiveplurality of areas P₁ to P_(N) are obtained, usefulness of thecorrection table may be verified.

Specifically, referring to FIG. 7, wavelength-specific preliminaryimages may be obtained by emitting (and/or directing) light includingvarious angle distributions toward the measurement area FOV of thesubstrate 111. Since a difference between the wavelength-specific lightintensity distributions is generated in the wavelength-specificpreliminary images due to the various angle distributions of light, anerror may occur in information on a surface of the measurement area FOV.Therefore, wavelength-specific corrected images may be obtained bycompensating for non-uniform light intensity distributions of thewavelength-specific preliminary images using a pre-determined correctiontable. Accordingly, accurate wavelength-specific images may be obtainedby simultaneously obtaining a high-resolution image and suppressing anerror from occurring.

Then, corrected spectrum data is generated based on thewavelength-specific corrected images, and a spectrum of at least oneinspection area having a range of the first measurement area or less maybe extracted and analyzed as described above. In this case, since eachof the spectra includes very accurate information on the inspection areathrough the correction operation, a 3D structure of the inspection areamay be analyzed or predicted with high accuracy.

FIG. 13 is a flowchart illustrating a correction operation of a positionmisalignment and size difference between the wavelength-specific imagescaused by a wavelength difference included in the obtaining of thewavelength-specific images (S103) of FIG. 1 according to the someexample embodiments of inventive concepts. FIGS. 14A to 14D are viewsillustrating a problem of a position misalignment and/or size differencebetween the wavelength-specific images caused by different wavelengthsas an object to be addressed by the correction operation of FIG. 13.

First, referring to FIGS. 14A to 14D, first to third images IMG_λ1 toIMG_λ3 with respect to first to third wavelength bands λ1 to λ3 arerepresented in a measurement area based on a position and size of areference image IMG_λ0 with respect to a reference wavelength band λ0.The first image IMG_λ1 with respect to the first wavelength band λ1 mayinclude a position misalignment compared to the reference image IMG_g.The second image IMG_λ2 with respect to the second wavelength band λ2may include a size difference compared to the reference image IMG_λ0.The third image IMG_λ3 with respect to the third wavelength band λ3 mayinclude a position misalignment and a size difference compared to thereference image IMG_λ0.

As described above with reference to FIG. 1, when a high-resolutionoptical device is used to inspect a micro-area, errors which are thesame as those in FIGS. 14B to 14D may occur in the wavelength-specificimages due to changes of an aberration and magnification of an opticalsystem. In this case, since different pieces of wavelength-specificposition information are input from a specific pixel of a detectorduring the generation of the spectrum data based on thewavelength-specific images, there may be a limit in generatingwavelength-specific spectra which accurately reflect the measurementarea. Therefore, since the obtaining of the wavelength-specific images(S103) includes correcting a position misalignment and size differencebetween the wavelength-specific images, the same wavelength-specificposition information may be input from a specific pixel of the detector.

Specifically, referring to FIG. 13, first, a position misalignment andsize difference between wavelength-specific images may be measured basedon the wavelength-specific images obtained by imaging the measurementarea (S103-4). Then, at least one of the substrate including themeasurement area and an optical system may be moved for each wavelengthso as to compensate for the position misalignment and size differencebetween the wavelength-specific images (S103-5). The configuration ofthe optical device 100 except the stage 112 may be referred to for aconfiguration of the optical system.

Referring again to FIG. 2, the substrate and/or the optical system maybe moved by the stage 112 which supports the substrate 111, or by anoptical system stage (not illustrated) which supports the opticalsystem. In this case, the stage 112 and the optical system stage may bemoved in the X direction, the Y direction, and the Z direction. Thestage 112 and the optical system stage may be horizontally moved tocompensate for the position misalignment, and may be vertically moved tocompensate for the size difference.

Then, wavelength-specific corrected images may be re-obtained for eachwavelength (S103-6). Since light for each wavelength reflected at aspecific position of the measurement area of the substrate 111 may bedetected from the same pixel of the detector 110 due to the compensationof the position misalignment and the size difference, accuratewavelength-specific corrected images and spectrum data generated basedon the wavelength-specific corrected images may be obtained.

Then, spectrum data corrected based on the wavelength-specific correctedimages may be generated and a spectrum of at least one inspection areahaving a range of the first measurement area or less may be extractedand analyzed as described above. In this case, since each of the spectraincludes accurate surface information on the inspection area due to thecorrection operation, a 3D structure of the inspection area may beanalyzed or predicted with high accuracy.

FIG. 15 is a flowchart illustrating a semiconductor device manufacturingmethod M200 according to some example embodiments of inventive concepts.The semiconductor device manufacturing method M200 is similar to thesemiconductor device manufacturing method M100 described with referenceto FIG. 1, but there is a difference in that a primary inspection isperformed on a wide measurement area and a secondary inspection is thenperformed in detail on an area determined as a region of interest (ROI)during the primary inspection. The same operations as those described inthe semiconductor device manufacturing method M100 will be brieflydescribed.

FIG. 16 is a diagram illustrating a schematic configuration of opticaldevices 100 and 200 used in the semiconductor device manufacturingmethod M200 of FIG. 15. FIG. 17 is a view illustrating a measurementarea on a substrate, which is measured by the optical devices of FIG.16.

Referring to FIGS. 15 and 17, first, a prior manufacturing process maybe performed on a substrate 111 (S201). Then, a primary inspection isperformed on the substrate 111 on which the prior manufacturing processhas been performed using a second optical device 200 of FIG. 16. Theprimary inspection may include obtaining first wavelength-specificimages IMGA by emitting (and/or directing) multi-wavelength light L1toward a measurement area FOV of the substrate 111 (S203), generatingfirst spectrum data of respective pixels based on the firstwavelength-specific images IMGA (S205), and extracting a spectrum of atleast one first inspection area IRA from the first spectrum data andprimarily analyzing the spectrum (S207).

Also referring to FIG. 16, the first optical device 100 described inFIG. 2 and the second optical device 200 having a maximum measuringrange and a resolution different from the first optical device 100 maybe used in the primarily analysis of the substrate 111. In this case,the first optical device 100 may be a vertical optical device having anoptical axis formed in a direction perpendicular to an upper surface ofthe stage 112 which supports the substrate 111, and the second opticaldevice 200 may be an inclined optical device having an optical axisformed in a direction inclined to the upper surface of the stage 112,but inventive concepts are not thereto.

The second optical device 200 may have a maximum viewing angle higherthan that of the first optical device 100. Accordingly, the secondoptical device 200 may have a maximum measuring range wider than amaximum measuring range of the first optical device 100. However, aresolution of the second optical device 200 may be lower than aresolution of the first optical device 100.

Specifically, the second optical device 200 may include a light source231 and an incident-side optical element 204. The light source 231 mayemit (and/or direct) multi-wavelength light. The incident-side opticalelement 204 may be connected to the light source 231. The incident-sideoptical element 204 may be a lens or a polarizer. Also referring to FIG.17, light L1 emitted (and/or directed) from the light source 231 may beemitted (and/or directed) toward a first measurement area FOV1 on thesubstrate 111 placed on the stage 112 passing through the incident-sideoptical element 204. The incident light L1 may proceed along an opticalaxis 205 in an incident body (not illustrated).

Further, the second optical device 200 may include an output-sideoptical element 210 and a detector 211. Reflected light L2 reflected bythe substrate 111 may be incident on the detector 211 through theoutput-side optical element 210. The reflected light L2 may proceedalong an optical axis 209 in an output body (not illustrated).

An angle adjuster 212, which may adjust an angle with respect tosensitivity of a measurement area by adjusting an incidence angle of theincident light L1 or a reflected angle of the reflected light L2, may beprovided between the incident body and the output body.

The detector 211 may be connected to a signal processor 214 and a signalanalyzer 215. The detector 211 may obtain wavelength-specific imagesusing the reflected light L2 reflected by the measurement area on thesubstrate 111. Further, the signal processor 214 may generate spectrumdata of respective pixels based on the wavelength-specific images. Afterthe generated spectrum data is stored in the signal analyzer 215, thegenerated spectrum data may be used for extracting a spectrum of atleast one first inspection area IRA.

Next, whether there is an ROI of the first inspection area IRA thatrequires detailed inspection may be determined (S209) in the primarilyanalyzing. The ROI may be an area which is determined as an area havinga defect during the analysis of the spectrum. When it is determined thatit is necessary to perform a detailed inspection on the ROI, a secondaryinspection may be performed on the ROI.

Before performing the secondary inspection, a spatial resolution may beselected by changing a magnification of an imaging optical system of thefirst optical device 100 for performing the secondary inspection (S211).Accordingly, the first optical device 100 may be set to have a highspatial resolution, and may analyze up to a micro-area in comparison tothe second optical device 200 of FIG. 16. Since the first optical device100 is described above in FIG. 2, a detailed description thereof will beomitted.

Meanwhile, the secondary inspection may include obtaining secondwavelength-specific images IMGB by emitting (and/or directing)multi-wavelength light L3 including various angle distributions of lighttoward the ROI using the first optical device 100 (S213), generatingsecond spectrum data of respective pixels based on the secondwavelength-specific images IMGB (S215), and extracting a spectrum of atleast one second inspection area IRB from the second spectrum data andsecondarily analyzing the spectrum (S217). Since the secondaryinspection is performed by the first optical device 100 having a highresolution, defects of the ROI that are found in the second opticaldevice 200 may be more accurately detected. That is, the firstinspection area IRA and the ROI IRA′ may be smaller than the firstmeasurement area FOV1 in the primary inspection, a measurement area FOV2in the secondary inspection may have a range similar to that of the ROI,and the second inspection area IRB may be smaller than the ROI.

In this way, since the first spectrum data with respect to a widesurface of the substrate 111 is used in the primary inspection, theinspection may be rapidly performed by extracting a plurality ofinspection areas. Further the primary inspection may be reviewed at thesame time that an inspection is performed in more detail than theprimary inspection on a narrow surface in the secondary inspection. Thatis, the secondary inspection may be performed in detail on a surface ofa micro-area smaller than an ROI, in which it is determined that thereis a defect in the primary inspection, as an inspection area.

After the primary and secondary inspections, a subsequent manufacturingprocess may be further performed on the substrate 111 on which the priormanufacturing process has been performed (S219). Then, whether it isnecessary to perform inspection on the surface of the substrate 111 onwhich the subsequent manufacturing process has been performed may bedetermined (S221), and when it is determined that the inspection isnecessary, the above-described primary and secondary inspections may beperformed on the substrate 111 on which the subsequent manufacturingprocess has been performed.

In this way, according to inventive concepts, whether an error ispresent in processes may be immediately determined since a semiconductormanufacturing process and a real-time inspection process are performedin real-time, and optimal process conditions during the semiconductormanufacturing process may be derived since an error is appropriately fedback to a manufacturing process facility.

The lights L1, L2, and L3 emitted (and/or directed) from the first andsecond optical devices 100 and 200 of FIG. 16 are exaggerated forconvenience of description, but inventive concepts are not thereto.

FIG. 18 is a view illustrating an example of an operation in whichspecific areas of different semiconductor chips on a substrate areinspected using the semiconductor device manufacturing method M200 ofFIG. 15.

Referring to FIG. 18, inspection may be performed on a surface of asubstrate by comparing a plurality of semiconductor chips. In this case,an area empirically having a small number of defects may be a referencearea.

First, a primary inspection may be performed using the second opticaldevice 200 of FIG. 16. That is, first wavelength-specific imagesincluding a plurality of semiconductor chips formed on the substrate 111may be obtained, and first spectrum data of respective pixels may begenerated based on the first wavelength-specific images. Then, areference shot corresponding to the reference area and a target shotcorresponding to a target area may be extracted from the first spectrumdata to be analyzed.

Next, when it is determined that some areas of the reference shot andthe target shot are ROIs which require detailed inspection, a secondaryinspection may be performed on the ROIs using the first optical device100 of FIG. 16.

That is, second wavelength-specific images with respect to each of thereference area and the target area may be obtained, and second spectrumdata of respective pixels may be generated based on the secondwavelength-specific images. Then, a reference point RR and a targetpoint TR may be extracted from the second spectrum data as secondinspection areas to be analyzed.

Whether there is an error at the target point TR may be determined bycomparing a spectrum of the target point TR to a spectrum of thereference point RR. Specifically, a detailed 3D structure may bedetermined using the reference map described with reference to FIG. 4.

FIG. 19 is a flowchart illustrating a semiconductor device manufacturingmethod M300 according to some example embodiments of inventive concepts.The semiconductor device manufacturing method M300 is similar to thesemiconductor device manufacturing method M100 of FIG. 1, and there is adifference in that an area adjacent to an alignment mark is extractedfrom an image obtained by an optical device to be checked in detail anda substrate 11 is aligned. FIG. 20 is a view illustrating an example ofan operation in which a substrate is aligned using the semiconductordevice manufacturing method M300 of FIG. 19.

Referring to FIGS. 19 and 20, the substrate 11 in which a prioralignment mark AM is formed may be prepared (S301). Then, a spatialresolution may be selected by changing a magnification of the imagingoptical system of the optical device 100 of FIG. 2. Accordingly, theoptical device 100 may be set to have a high spatial resolution.

Next, light is emitted (and/or directed) toward an area in which thealignment mark AM is formed as a measurement area FOV, and an image IMGCwith respect to the measurement area FOV may be obtained (S303). Then,the substrate 11 may be aligned based on the image IMGC.

The alignment of the substrate may include checking a position of thealignment mark AM of the substrate 11 based on the image IMGC (S305),and moving the substrate 11 so that the alignment mark AM is alignedwith preset coordinates (S307).

Then, a manufacturing process and a subsequent process of forming analignment mark may be performed on the substrate 11 (S309), and whetherit is required to perform alignment inspection on the substrate 11 onwhich the manufacturing process has been performed may be determined(S311). When it is determined that an alignment inspection is required,the above-described obtaining of the image (S303), checking of theposition of the alignment mark (S305), and moving of the substrate basedon the position of the alignment mark (S307) may be performed.

The alignment of the substrate 11 may be continuously performed untilthe manufacturing process of the semiconductor device is completed(S313). The alignment is illustrated as being performed after themanufacturing process in FIG. 19, but inventive concepts are notthereto. The alignment of the substrate 11 may be before the substrate11 is processed in an operation of inspecting an electricalcharacteristic of the semiconductor device, an operation of inspecting asurface of the semiconductor substrate, an operation using a stepper forperforming a photolithography process, and an operation using anothersubstrate processing facility, in order for the substrate 11 to bepositioned at a predetermined position inside a device.

In this way, in the semiconductor device manufacturing method M300according to inventive concepts, since the spatial resolution isselected according to the magnification of the imaging optical system109 of the optical device 100 of FIG. 2 and an accurate position may besecured by selectively extracting an area in which the alignment mark AMis positioned from the obtained image to be analyzed, the substrate 11may be accurately aligned during the manufacturing process and theinspection process.

FIGS. 21A and 21B are views illustrating results of inspecting thicknessuniformity at a plurality of cell block positions of a semiconductordevice using the methods of manufacturing the semiconductor deviceaccording to some example embodiments of inventive concepts.

Referring to FIGS. 21A and 21B, the inspection of the surface describedwith reference to FIGS. 1 to 18 may be performed on a substrateincluding a plurality of cell blocks.

After wavelength-specific images are obtained from an area includingnine cell block areas CB1 to CB9 of the substrate as a measurement area,spectrum data may be generated based on the wavelength-specific images.Then, a spectrum of each of the nine cell block areas CB1 to CB9 may beextracted from the spectrum data. The inspection is performed by anoptical device which may set a pixel area of a detector to a desiredand/or minimum measurement area as described above.

Therefore, each of the nine cell block areas CB1 to CB9 may be analyzedby spectra of a plurality of pixel areas. For example, a first cellblock area CB1 shows the same wavelength band over a wide area in acenter portion and a right portion. On the other hand, a wavelength banddifferent from the wavelength bands in the center portion and the rightportion is shown in a left portion, and various wavelength bands areshown in the left portion. Therefore, while the center and rightportions of the first cell block area CB1 have a uniform thickness,thickness uniformity in the left portion thereof may be analyzed asbeing reduced.

In this way, thickness uniformity between the nine cell block areas CB1to CB9 may be analyzed. That is, in the inspection according toinventive concepts, inspection areas distributed over a wide area may berapidly inspected in detail.

FIG. 21B is a view illustrating the extracted nine cell block areas CB1to CB9 in FIG. 21A as a single image. Since the extracted nine cellblock areas CB1 to CB9 are represented as having different wavelengthbands according to a 3D structure in FIG. 21B, the thickness uniformitybetween the nine cell block areas CB1 to CB9 may be easily checked.

While embodiments have been particularly shown and described withreference to exemplary embodiments thereof, those of ordinary skill inthe art should understand that various changes in form and details maybe made therein without departing from the spirit and scope ofembodiments as defined by the following claims.

1. A method of inspecting a surface, the method comprising: preparing asubstrate which is an inspection target; selecting a spatial resolutionof a first optical device, the first optical device including a lightsource configured to emit light, an objective lens configured totransmit light received from the light source, a detector, and animaging optical system configured to image light detected by thedetector, the selecting the spatial resolution of the first opticaldevice including setting a magnification of the imaging optical system;emitting multi-wavelength light toward a first measurement area of thesubstrate using the light source to emit the multi-wavelength light andthe objective lens to transmit the multi-wavelength light received fromthe light source towards the first measurement area; obtaining firstwavelength-specific images using the imaging optical system and thedetector, generating first spectrum data of respective pixels based onthe first wavelength-specific images; extracting a spectrum of at leastone first inspection area having a range of the first measurement areaor less from the first spectrum data; and analyzing the spectrum.
 2. Themethod of claim 1, wherein the analyzing of the spectrum includespredicting a three dimensional structure of the first inspection areabased on matching the spectrum of the first inspection area to aspectrum of a reference map, and the reference map is generated based onobtaining spectra corresponding to different three dimensionalstructures on a test substrate.
 3. The method of claim 1, wherein theobtaining the first wavelength-specific images includes correcting lightintensity distributions due to various angle distributions of themulti-wavelength light.
 4. (canceled)
 5. The method of claim 1, whereinthe multi-wavelength light is emitted having an optical axis in adirection perpendicular to an upper surface of the substrate.
 6. Themethod of claim 1, wherein the obtaining of the firstwavelength-specific images comprises correcting a position misalignmentand size difference which occur between the first wavelength-specificimages due to different wavelengths.
 7. (canceled)
 8. The method ofclaim 1, further comprising: selecting a measurement mode before theobtaining of the first wavelength-specific images, wherein the selectingthe measurement mode includes selecting any one of a first measurementmode having a first numerical aperture and a second measurement modehaving a second numerical aperture smaller than the first numericalaperture based on a type of a parameter to be inspected in the firstinspection area. 9-11. (canceled)
 12. The method of claim 1, wherein theat least one first inspection area is a plurality of first inspectionareas that are spaced apart from each other.
 13. (canceled)
 14. Themethod of claim 1, wherein the analyzing of the spectrum includes:extracting a spectrum of a reference area and a spectrum of the firstinspection area from the first spectrum data; and comparing the spectrumof the first inspection area to the spectrum of the reference area. 15.The method of claim 1, further comprising: previously analyzing thesubstrate before the selecting of the spatial resolution of the firstoptical device, wherein the previously analyzing of the substrateincludes, emitting multi-wavelength light toward a second measurementarea of the substrate using a second optical device and obtaining secondwavelength-specific images, generating second spectrum data ofrespective pixels based on the second wavelength-specific images,extracting a spectrum of at least one second inspection area from thesecond spectrum data and previously analyzing the spectrum of the atleast one second inspection area, and determining whether there is aregion of interest, which requires detailed inspection, in the secondinspection area in the previously analyzing of the substrate, and theregion of interest is the first measurement area. 16-17. (canceled) 18.A method of manufacturing a semiconductor device, the method comprising:performing a prior manufacturing process on the substrate beforepreparing the substrate; primarily inspecting the substrate according tothe method of claim 1; and performing a subsequent manufacturing processon the substrate after the primarily inspecting the substrate.
 19. Amethod of manufacturing a semiconductor device, the method comprising:performing a prior manufacturing process on a substrate; and primarilyinspecting the substrate using an optical device, the optical deviceincluding a light source configured to emit light, an objective lensconfigured to transmit light received from the light source, a detector,and an imaging optical system configured to image light detected by thedetector, the primarily inspecting the substrate includes selecting aspatial resolution of the optical device by changing a magnification ofthe imaging optical system, emitting multi-wavelength light toward ameasurement area of the substrate using the light source and theobjective lens, and obtaining wavelength-specific images, generatingspectrum data of respective pixels based on the wavelength-specificimages, and extracting a spectrum of at least one inspection area havinga range of the measurement area or less from the spectrum data, andanalyzing the spectrum of the at least one inspection area.
 20. Themethod of claim 19, wherein the obtaining the wavelength-specific imagesincludes correcting optical interference caused by the substrate beforethe prior manufacturing process is performed.
 21. The method of claim20, wherein the correcting the optical interference includes: obtainingwavelength-specific base images of the substrate before the priormanufacturing process is performed; and removing the wavelength-specificbase images from the wavelength-specific images.
 22. The method of claim19, further comprising: performing a subsequent manufacturing process onthe substrate after the primarily inspecting of the substrate;determining whether it is necessary to perform inspection on thesubstrate on which the subsequent manufacturing process is performed;and secondarily inspecting the substrate on which the subsequentmanufacturing process is performed in the same method as the primaryinspection when it is determined that the inspection is necessary. 23.(canceled)
 24. The method of claim 19, further comprising: aligning thesubstrate based on the wavelength-specific images, wherein the aligningof the substrate includes checking a position of an alignment mark ofthe substrate based on an image with respect to at least one wavelengthof the wavelength-specific images, and moving the substrate so that thealignment mark is aligned with preset coordinates.
 25. A method ofmanufacturing a semiconductor device, the method comprising: primarilyinspecting the substrate according to the method of claim 19; andperforming a subsequent manufacturing process on the substrate after theprimarily inspecting the substrate. 26-29. (canceled)
 30. A method ofinspecting a surface, the method comprising: selecting a spatialresolution of a first optical device, the first optical device includinga light source configured to emit light, an objective lens configured totransmit light received from the light source, a detector, and animaging optical system configured to image light detected by thedetector, the selecting the spatial resolution of the first opticaldevice including setting a magnification of the imaging optical system;emitting multi-wavelength light toward a first measurement area of asubstrate using the light source to emit the multi-wavelength light andthe objective lens to transmit the multi-wavelength light received fromthe light source towards the first measurement area; obtaining firstwavelength-specific images using the imaging optical system and thedetector; generating first spectrum data of respective pixels based onthe first wavelength-specific images; extracting a spectrum of at leastone first inspection area having a range of the first measurement areaor less from the first spectrum data; and analyzing the spectrum, theanalyzing the spectrum including one of, predicting a three dimensionalstructure of the first inspection area based on matching the spectrum ofthe first inspection area to a spectrum of a reference map, thereference map being generated based on obtaining spectra correspondingto different three dimensional structures on a test substrate, andextracting a spectrum of a reference area and a spectrum of the firstinspection area from the first spectrum data, and determining if thespectrum of the first inspection area matches the spectrum of thereference area using a spectrum recognition algorithm.
 31. The method ofclaim 30, wherein the analyzing of the spectrum includes the predictinga three dimensional structure of the first inspection area based onmatching the spectrum of the first inspection area to a spectrum of areference map, and the reference map is generated based on obtainingspectra corresponding to different three dimensional structures on atest substrate.
 32. The method of claim 30, wherein the analyzing of thespectrum includes extracting the spectrum of the reference area and thespectrum of the first inspection area from the first spectrum data, anddetermining if the spectrum of the first inspection area matches thespectrum of the reference area using the spectrum recognition algorithm.33. (canceled)
 34. A method of manufacturing a semiconductor device, themethod comprising: performing a prior manufacturing process on a wafer,primarily inspecting the wafer according to the method of claim 30, thewafer is including the substrate; and performing a subsequentmanufacturing process on the wafer after the primarily inspecting thewafer.